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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 75* i d @ v gs = 12v, t c = 100c continuous drain current 72 i dm pulsed drain current ? 300 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 360 mj i ar avalanche current ? 75 a e ar repetitive avalanche energy ? 25 mj dv/dt p eak diode recovery dv/dt ? 4.0 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g o c a 08/14/03 www.irf.com 1 100v, n-channel technology product summary part number radiation level r ds(on) i d IRHNA67160 100k rads (si) 0.01 ? 75a* irhna63160 300k rads (si) 0.01 ? 75a* irhna64160 600k rads (si) 0.01 ? 75a* irhna68160 1000k rads (si) 0.01 ? 75a* for footnotes refer to the last page pre-irradiation radiation hardened IRHNA67160 power mosfet surface-mount (smd-2) features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight smd-2 international rectifier?s r6 tm technology provides superior power mosfets for space applications. these devices have improved immunity to single event effect (see) and have been characterized for useful performance with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in today?s high speed switching appli- cations such as dc-dc converters and motor con- trollers. these devices retain all of the well established advantages of mosfets such as volt- age control, ease of paralleling and temperature sta- bility of electrical parameters. * current is limited by package pd - 94299
IRHNA67160 pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 75* i sm pulse source current (body diode) ? ? ? 300 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 75a, v gs = 0v ? t rr reverse recovery time ? ? 500 ns t j = 25c, i f = 75a, di/dt 100a/ s q rr reverse recovery charge ? ? 6.9 cv dd 25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.11 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.01 ? v gs = 12v, i d = 72a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 60 ? ? s ( ) v ds = 25v, i ds = 72a ? i dss zero gate voltage drain current ? ? 10 v ds = 80v ,v gs =0v ??25 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 165 v gs = 12v, i d = 75a q gs gate-to-source charge ? ? 80 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 60 t d (on) turn-on delay time ? ? 35 v dd = 50v, i d = 75a, t r rise time ? ? 125 v gs = 12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 75 t f fall time ? ? 20 l s + l d total inductance ? 2.8 ? c iss input capacitance ? 8915 ? v gs = 0v, v ds = 25v c oss output capacitance ? 1600 ? p f f = 100khz c rss reverse transf er capacitance ? 22.7 ? na ? ? nh ns a measured from the center of drain pad to center of source pad r g internal gate resistance ? 0.96 ? ? f = 0.71mhz, open drain thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.5 c/w note: corresponding spice and saber models are available on international rectifier web site. * current is limited by package
www.irf.com 3 pre-irradiation IRHNA67160 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 ? 100 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 80v, v gs =0v r ds(on) static drain-to-source ? ? 0.011 ? 0.011 ? v gs = 12v, i d =72a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.010 ? 0.010 ? v gs = 12v, i d =72a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRHNA67160, irhna63160 and irhna64160 2. part number irhna68160 v sd diode forward voltage ? ? 1.2 ? 1.2 v v gs = 0v, i s = 75a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. single event effect, safe operating area 0 20 40 60 80 100 120 -20 -15 -10 -5 0 vgs vds br i au table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm2)) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -5v -10v -15v -17v -19v -20v br 36.7 309 39.5 100 100 100 100 100 100 40 i 59.8 341 32.5 100 100 100 30 - - - au 82.3 350 28.4 100 100 - - - - -
IRHNA67160 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 75a

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www.irf.com 5 pre-irradiation IRHNA67160 100khz fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage * , ' * ,

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i d , drain-to-source current (a) "*#$% !"#$% - - ./0.11 0/0 234/ 5 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 75a v = 20v ds v = 50v ds v = 80v ds 1 10 100 0 2000 4000 6000 8000 10000 12000 14000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 100khz
IRHNA67160 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package
www.irf.com 7 pre-irradiation IRHNA67160 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . v gs 25 50 75 100 125 150 0 100 200 300 400 500 600 700 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 33.5a 47.4a 75a
IRHNA67160 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25c, l= 0.13 mh peak i l = 75a, v gs = 12v ? i sd 75a, di/dt 470a/ s, v dd 100v, t j 150c footnotes: case outline and dimensions ? smd-2 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/03

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